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NSS40301MDR2G

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NSS40301MDR2G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
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Part Number:
NSS40301MDR2G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NSS40301MDR2G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.87
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor. Rozee is one of the Distributors. Wide range of applications.
Width:
4 mm
Length:
5 mm
Frequency:
100 MHz
Case/Package:
SOIC
Power Dissipation:
783 mW
Transition Frequency:
100 MHz
Max Collector Current:
3 A
Gain Bandwidth Product:
100 MHz
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
40 V
Collector Emitter Breakdown Voltage:
40 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
3078 In Stock
Applications:
Electronic point of sale (EPOS) Wireless infrastructure Infotainment & cluster
Height:
1.5 mm
Polarity:
NPN
Packaging:
Tape and Reel
Number of Pins:
8
Number of Elements:
2
Element Configuration:
Dual
Max Power Dissipation:
783 mW
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
6 V
Collector Emitter Voltage (VCEO):
40 V
Collector Emitter Saturation Voltage:
115 mV
หมายเลขรุ่น:
NSS40301MDR2G
คําแนะนํา
NSS40301MDR2G Overview\\\\nNSS40301MDR2G is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NSS40301MDR2G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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