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2SK3906(Q)
คําอธิบาย:
2SK3906(Q) datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
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Part Number:
2SK3906(Q)
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
2SK3906(Q) More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Height:
19 mm
Fall Time:
10 ns
Rds On Max:
330 mΩ
Termination:
Through Hole
Input Capacitance:
4.25 nF
Threshold Voltage:
4 V
Dual Supply Voltage:
600 V
Max Power Dissipation:
150 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
30 V
Drain to Source Voltage (Vdss):
600 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
90 In Stock
Applications:
Wireless infrastructure
Test & measurement
Mobile phones
Width:
4.8 mm
Length:
15.9 mm
Rise Time:
12 ns
Nominal Vgs:
4 V
Number of Pins:
3
Power Dissipation:
150 W
Number of Elements:
1
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
330 mΩ
Continuous Drain Current (ID):
20 A
Drain to Source Breakdown Voltage:
600 V
หมายเลขรุ่น:
2SK3906 (Q)
คําแนะนํา
2SK3906(Q) Overview\\n2SK3906(Q) is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 2SK3906(Q) high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. 2SK3906(Q) is
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